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| 型號(hào)： | 7P008FLA6101C15 |
| 英文描述： | Peripheral Miscellaneous |
| 中文描述： | 周邊雜項(xiàng) |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大小： | 140K |
| 代理商： | 7P008FLA6101C15 |
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August 2000 Rev. 4 - ECO #13125
4
PCMCIA Flash Memory Card
FLA Series
PC Card Products
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to
64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit
DQ0 - DQ15
INPUT/OUTPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-
directional databus. DQ15 is the MSB.
CE1#, CE2#
INPUT
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-
bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal gating read data from the
memory card.
WE#
INPUT
WRITE ENABLE: Active low signal gating write data to the memory
card.
RDY/BSY#
OUTPUT
READY/BUSY OUTPUT: Indicates status of internally timed erase or
program algorithms. A high output indicates that the card is ready to
accept accesses. A low output indicates that one or more devices in the
memory card are busy with internally timed erase or write activities.
CD1#, CD2#
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These
signals are internally connected to ground on the card. The host shall
monitor these signals to detect card insertion (pulled-up on host side).
WP
OUTPUT
WRITE PROTECT: Write protect reflects the status of the Write Protect
switch on the memory card. WP set to high = write protected, providing
internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will be
pulled low internally indicating write protect = "off".
VPP1, VPP2
N.C.
PROGRAM/ERASE POWER SUPPLY: Provides programming
voltages for card (12V). Not connected for 5V only card.
VCC
CARD POWER SUPPLY: (5.0V).
GND
CARD GROUND
REG#
INPUT
ATTRIBUTE MEMORY SELECT : Active low signal, enables access to
Attribute Memory Plane, occupied by Card Information Structure and
Card Registers.
RST
INPUT
RESET: Active high signal for placing card in Power-on default state.
Reset can be used as a Power-Down signal for the memory array.
WAIT#
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait
states are generated.
BVD1, BVD2
OUTPUT
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
VS1, VS2
OUTPUT
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card .
RFU
RESERVED FOR FUTURE USE
N.C.
NO INTERNAL CONNECTION TO CARD: pin may be driven or left
floating
Card Signal Description
READ function
Common Memory
Attribute Memory
Function Mode
/CE2
/CE1
A0
/OE
/WE
/REG
D15-D8
D7-D0
/REG
D15-D8
D7-D0
Standby Mode
H
X
High-Z
X
High-Z
Byte Access (8 bits)
H
L
H
High-Z
Even-Byte
L
High-Z
Even-Byte
HL
H
High-Z
Odd-Byte
LHigh-Z
Not Valid
Word Access (16 bits)
L
X
L
H
Odd-Byte Even-Byte
L
Not Valid
Even-Byte
Odd-Byte Only Access
L
H
X
L
H
Odd-Byte
High-Z
L
Not Valid
High-Z
WRITE function
Standby Mode
H
X
XX
X
XX
X
Byte Access (8 bits)
HL
L
H
L
H
X
Even-Byte
L
X
Even-Byte
HL
H
L
H
X
Odd-Byte
LX
X
Word Access (16 bits)
L
X
H
L
H
Odd-Byte Even-Byte
L
X
Even-Byte
Odd-Byte Only Access
L
H
X
H
L
H
Odd-Byte
X
LX
X
Functional Truth Table
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