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參數(shù)資料
| 型號(hào)： | 7P002FEA0300TZZ |
| 英文描述： | Eight Bit Flash Memory Card(Intel Based)(2MB，8位閃速存儲(chǔ)器卡（基于Intel 28F008S5）) |
| 中文描述： | 8位閃存卡（基于Intel）（2MB的，8位閃速存儲(chǔ)器卡（基于英特爾28F008S5）） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 65K |
| 代理商： | 7P002FEA0300TZZ |
August 2000 Rev. 3 - ECO #13123
4
PCMCIA Flash Memory Card
FEA Series
PC Card Products
100ns
Min
100
150ns
Min
150
SYM
t
C
(R)
t
a
(A)
t
a
(CE)
t
a
(OE)
t
c
W
t
W
(WE)
Parameter
Read Cycle Time
Address Access Time
Card Enable Access Time
Output Enable Access Time
Write Cycle Time
Write Pulse Width
Max
Max
Unit
ns
ns
ns
ns
ns
ns
100
100
50
150
150
75
100
60
150
80
VCC = 5V ± 5%, TA = 0
°
C to + 70
°
C
Note:
AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
SYM
t
WHQV1
t
EHQV1
t
WHQV2
t
EHQV2
Parameter
Word/Byte Program time
Notes
2
Min
Typ
(1)
8μs
Max
3ms
Units
Test Conditions
Block Program Time
2
0.4
2.1
sec
Word Program Mode
Block Erase Time
Full Chip Erase Time
2
2, 4
0.6
38.4
10
sec
sec
VCC = 5V ± 5%, TA = 0
°
C to + 70
°
C
Notes:
1. Typical: Nominal voltages and TA = 25
°
C.
2. Excludes system overhead.
3. Valid for all speed options.
4. Chip erase time based on 8 Mbit Flash components.
Symbol Parameter
ICCR
VCC Read Current
Notes
Typ
(3)
20
Max
35
Units
mA
Test Conditions
VCC = 5.25V
tcycle = 125ns
S5 components
75
30
30
50
30
30
100
mA
mA
mA
mA
mA
mA
μ
A
μ
A
ICCW
VCC Program Current
SA components
10
10
IPPW
ICCE
VPP Program Current
VCC Block Erase Current
SA components
VPP = VPPH
S5 components
SA components
10
10
50
100
IPPE
ICCS
VPP Block Erase Current
VCC Standby Current
SA components
S5 components, 2)
SA components, 2)
VCC = 5.25V
Notes:
1. All currents are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#.
3. Typical: VCC = 5V, T = +25
°
C.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
AC Characteristics
(1)
Data Write and Erase Performance
(1,3)
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