參數(shù)資料
型號： 7N70-TF3-T
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： JFETs
英文描述： 7 Amps, 700 Volts N-CHANNEL POWER MOSFET
中文描述： 7 A, 700 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 160K
代理商： 7N70-TF3-T
7N70
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-103,A
2 of 8
ABS OLUT E MAX IMUM RAT INGS
(T
C
= 25
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
RATINGS
700
±30
7.0
4.7
28
530
14.2
4.5
142
+150
-55 ~ +150
UNIT
V
V
A
A
A
mJ
mJ
V/ns
W
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25°C
T
C
= 100°C
Continuous Drain Current
I
D
Drain Current Pulsed (Note 1)
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive, Limited by T
JMAX
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
DM
E
AS
E
AR
dv/dt
P
D
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
62.5
0.88
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
ELECT RICAL CHARACT ERIS T ICS
(T
C
=25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 700 V, V
GS
= 0 V
V
DS
= 560 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
700
V
μA
μA
nA
nA
1
1
Drain-Source Leakage Current
I
DSS
Forward
Reverse
100
-100
Gate-Source Leakage Current
I
GSS
Breakdown Voltage Temperature
Coefficient
ON Characteristics
Gate Threshold Voltage
Drain-Source ON-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
DSS
/
T
J
I
D
= 250 μA, Referenced to 25°C
0.67
V/
V
GS(TH)
R
DS(ON)
g
FS
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 3.5 A
V
DS
= 40 V, I
D
= 3.5 A (Note 4)
2.0
4.0
V
S
1.35 1.5
8.0
C
ISS
C
OSS
C
RSS
1200 1600
150 190
18
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
25
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
DD
35
79
80
52
30
6.5
13
80
165
160
120
ns
ns
ns
ns
nC
nC
nC
V
DD
= 350V, I
D
= 7.0 A
(Note 4, 5)
V
DS
= 560V, I
D
= 7.0A, V
GS
= 10 V
(Note 4, 5)
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