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參數(shù)資料
| 型號(hào)： | 7N65L-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 7 Amps, 650 Volts 7 Amps, 650 Volts |
| 中文描述： | 7.4 A, 650 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | 7N65L-TF3-T |
7N65
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-104,A
7 of 8
T Y PICAL CHARACT ERIS T ICS (Cont.)
00
D
R
D
Drain Current, I
D
(A)
5
10
V
GS
=20V
0.5
1.0
2.0
2.5
On-Resistance Variation vs Drain
Current and Gate Voltage
1.5
15
20
25
Note: T
J
=25
V
GS
=10V
1
0.1
0.2
Source-Drain Voltage, V
SD
(V)
R
D
(
On State Current vs. Allowable Case
Temperature
1.8
0.4 0.6 0.8 1.0 1.2
1.6
1.4
10
150
25
Notes:
1. V
GS
=0V
2. 250
μ
s Test
2000
0
0.1
Drain-SourceVoltage V
DS
(V)
C
1600
400
1
10
C
iss
1200
800
Notes:
1. V
GS
=0V
2.f = 1MHz
C
iss=
C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Capacitance Characteristics
(Non-Repetitive)
0
G
Total Gate Charge, Q
G
(nC)
10
30
50
8
10
12
20
6
4
2
0
V
DS
=130V
V
DS
=520V
V
DS
=325V
40
Gate Charge Characteristics
C
oss
C
rss
60
70
Note: I
D
=7A
Notes:
1.
2. Duty Factor, D=t1/t2
3.T
JM
-T
C
=P
DM
×
JC
(t) = 0.88
/W Max.
JC
(t)
T
θ
J
(
1
0.1
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration t
1
(sec)
Transient Thermal Response
Curve
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| 7N65L-TQ2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET |
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| 7N65-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:7 Amps, 650 Volts 7 Amps, 650 Volts |
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| 7N65ZG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:7.4A, 650V N-CHANNEL POWER MOSFET |
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