參數(shù)資料
型號(hào): 7N65
廠商: 友順科技股份有限公司
英文描述: 7 Amps, 650 Volts 7 Amps, 650 Volts
中文描述: 七安培,650伏特七安培,650伏特
文件頁數(shù): 6/8頁
文件大?。?/td> 160K
代理商: 7N65
7N65
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-104,A
6 of 8
T Y PICAL CHARACT ERIS T ICS
Breakdown Voltage Variation vs
-100
Junction Temperature, T
J
(
D
B
D
(
)
-50
50
200
100 150
1.2
0
1.1
1.0
0.9
0.8
Note:
1. V
GS
=0V
2. I
D
=250
μ
A
Temperature
-100
Junction Temperature, T
J
(
D
R
D
(
)
-50
50
200
100
150
3.0
0
2.0
1.0
0.5
0.0
1.5
2.5
On-Resistance Junction Temperature
Note:
1. V
GS
=10V
2. I
D
=3.5A
10
1
0.1
Drain-Source Voltage, V
DS
(V)
D
D
(
100
10
1
100
μ
s
1000
10ms
1ms
DC
Operation in This Area is Limited by R
DS(ON)
Maximum Safe Operating Area
D
(
Case Temperature, T
C
(
)
75
100
0
125
50
25
2
4
6
8
Maximum Drain Current vs. Case
Temperature
Notes:
1. T
J
=25
2. T
J
=150
3.Single Pulse
150
10
1
10
0.1
1
Drain-to-Source Voltage, V
DS
(V)
D
D
(
On-State Characteristics
0.1
2
Gate-Source Voltage, V
GS
(V)
D
D
Transfer Characteristics
4
6
8
10
150
Notes:
1. V
DS
=50V
2.250
μ
s Pulse Test
10
1
0.1
25
Notes:
1. 250
μ
s Pulse Test
2.T
C
=25
V
GS
Top: 10V
8V
75V
7V
6.5V
6 V
5.5V
Bottorm:5.5V
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