參數(shù)資料
型號: 7N60L-TF3-T
廠商: 友順科技股份有限公司
英文描述: 7.4 Amps, 600 Volts N-CHANNEL MOSFET
中文描述: 7.4安培,600伏特N通道MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 154K
代理商: 7N60L-TF3-T
7N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-076,B
ELECT RICAL CHARACT ERIS T ICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25°C
3. I
SD
7.4A, di/dt
200A/μs, V
DD
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
300μs, Duty cycle
2%
5. Essentially independent of operating temperature
V
SD
V
GS
= 0V, I
S
= 7.4 A
1.4
V
I
S
7.4
A
I
SM
29.6
A
t
RR
Q
RR
320
2.4
ns
μC
V
GS
= 0V, I
S
= 7.4 A,
d
IF
/ dt = 100A/μs (Note 4)
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