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參數(shù)資料
| 型號： | 7N60AL-x-TF3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 7 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 中文描述： | 七安培，600/650伏特N通道MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 237K |
| 代理商： | 7N60AL-X-TF3-T |
7N60A
Power MOSFET
ABS OLUT E MAX IMUM RAT INGS
(
T
C
= 25
PARAMETER
, unless otherwise specified)
SYMBOL
RATINGS
600
650
±30
7
7
3.2
28
330
7.5
30
+150
-55 ~ +150
-55 ~ +150
UNIT
V
V
V
A
A
A
A
mJ
mJ
W
7N60A-A
7N60A-B
Drain-Source Voltage
V
DSS
Gate-Source Voltage
Avalanche Current (Note 1)
V
GSS
I
AR
T
C
= 25°C
T
C
= 100°C
Continuous Drain Current
I
D
Pulsed Drain Current (Note 1)
I
DM
E
AS
E
AR
P
D
T
J
T
OPR
T
STG
Single Pulsed (Note 2)
Repetitive Limited by T
J(MAX)
Avalanche Energy
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
62.5
4.16
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
ELECT RICAL CHARACT ERIST ICS
(T
C
=25
PARAMETER
OFF CHARACTERISTICS
, unless otherwise specified)
TEST CONDITIONS
SYMBOL
MIN TYP MAX UNIT
7N60A-A
7N60A-B
600
650
V
V
μA
nA
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250μA
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage (Note 4)
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
Reverse Recovery Time
Reverse Recovery Charge
I
DSS
I
GSS
V
DS
= 600V, V
GS
= 0V
V
DS
= ±30V, V
GS
= 0V
1
±100
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.5A (Note 4)
2.0
4.0
1.2
V
1.0
C
ISS
C
OSS
C
RSS
950 1430
85
12
pF
pF
pF
130
18
V
DS
=25V, V
GS
=0V, f=1.0 MHz
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
16
60
80
65
28
5.5
11
ns
ns
ns
ns
nC
nC
nC
V
DD
=300V, I
D
=7A, R
G
=25
(Note 3, 4)
42
8.3
17
V
DS
=300V, I
D
=7A, V
GS
=10 V
(Note 3, 4)
V
SD
V
GS
= 0V, I
S
= 7A
1.4
V
I
S
7
A
I
SM
28
A
t
RR
Q
RR
365
4.23
ns
μC
V
GS
= 0V, I
S
= 7A,
dI
F
/ dt = 100A/μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
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