參數(shù)資料
型號: 7MBR25SA120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT(1200V/25A/PIM)
中文描述: 25 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁數(shù): 3/7頁
文件大?。?/td> 422K
代理商: 7MBR25SA120
IGBT Module
7MBR25SC120
Characteristics (Representative)
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
C
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
C
0
1
2
3
4
5
0
10
20
30
40
50
60
Tj= 25°C
Tj= 125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
C
5
10
15
20
25
0
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
C
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
C
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
50
100
150
200
250
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
Gate charge : Qg [ nC ]
C
0
5
10
15
20
25
G
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