- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369363 > 7MBR25PE120 (FUJI ELECTRIC CO LTD) IGBT Module(Power Integrated Module) PDF資料下載
參數(shù)資料
| 型號(hào)： | 7MBR25PE120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module(Power Integrated Module) |
| 中文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 422K |
| 代理商： | 7MBR25PE120 |
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
V
CE(sat)
V
GE
=15V, Ic=25A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=25A
V
GE
=±15V
R
G
=51
I
F
=25A chip
terminal
I
F
=25A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=15A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=15A
V
GE
=±15V
R
G
=82
V
R
=1200V
V
DM
=1600V
V
RM
=1600V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=25A chip
terminal
I
F
=25A chip
terminal
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
T
I
CES
I
GES
V
GE(th)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=25mA
100
200
8.5
2.6
1.2
0.6
1.0
0.3
3.2
350
100
200
2.6
1.2
0.6
1.0
0.3
100
1.0
1.0
100
2.5
1.15
1.5
100
3000
5.5 7.2
μA
nA
V
V
pF
μs
V
ns
μA
nA
V
μs
μA
mA
mA
mA
V
V
V
μA
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
Contact thermal resistance * Rth(c-f)
0.69
1.30
1.14
1.00 °C/W
0.90
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Thermal resistance Characteristics
IGBT Module
7MBR25SC120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.2
0.35
0.25
0.45
0.08
2.3
2.4
2.1
2.2
0.35
0.25
0.45
0.08
1.05
1.1
1.1
1.2
5000
465 495 520
3305 3375 3450
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR25SA120 | IGBT(1200V/25A/PIM) |
| 7MBR25SA140 | Power Integrated Module |
| 7MBR50SC060 | PIM/Built-in converter with thyristor and brake (S series)600V / 50A / PIM |
| 7MBR50SD120 | PIM/Built-in converter with thyristor and brake (S series) |
| 7MBR75UB120 | IGBT MODULE (U series) 1200V / 75A / PIM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR25SA120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT(1200V/25A/PIM) |
| 7MBR25SA-120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power Integrated Module (PIM) |
| 7MBR25SA120-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR25SA-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1200V 25A M711 制造商:Fuji Electric 功能描述:IGBT, 7 PACK MOD, 1200V, 25A, M711 制造商:Fuji Electric 功能描述:IGBT, 1.2KV, 25A, MODULE; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:2.1V; No. of Pins:24; Module Configuration:Seven ;RoHS Compliant: Yes |
| 7MBR25SA140 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。