參數(shù)資料
型號(hào): 7MBR10UE-120
英文描述: MCU CMOS 20LD .5K 10MHz, 0C to +70C, 20-SSOP 208mil, TUBE
中文描述: IGBT的7個(gè)人信息管理
文件頁數(shù): 6/15頁
文件大小: 833K
代理商: 7MBR10UE-120
H04-004-03a
15
MS6M 0802
a
6
5. Thermal resistance characteristics
Brake IGBT
Converter Diode
with Thermal Compound (*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of production
7.Applicable category
This specification is applied to IGBT Module named 7MBR100U2B060 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
Lot.No.
Place of manufacturing (code)
Items
Symbols
Conditions
Characteristics
typ.
-
-
Units
min.
-
-
max.
0.33
0.67
-
Contact Thermal resistance(1device)
Rth(c-f)
0.05
-
Thermal resistance(1device)
-
-
-
-
Rth(j-c)
Inverter IGBT
Inverter FWD
0.67
0.47
°C/W
100A 600V
7MBR100U2B060
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
V
CE
Ic
0V
0A
0V
1
0%
90%
1
0%
1
0%
90%
90%
0V
Ic
V
CE
on
t
r
t
r(i)
t
off
t
f
t
rr
rr
I
rr
rr
t
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