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參數(shù)資料
| 型號： | 7MBR10SA-140 |
| 英文描述： | MCU CMOS 18LD .5K 10MHz, 0C to +70C, 18-PDIP, TUBE |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 833K |
| 代理商： | 7MBR10SA-140 |
H04-004-03a
15
MS6M 0802
a
10
Vcc=300V
，
Ic=100A
，
Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10
8V
0
50
100
150
200
250
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
50
100
150
200
250
0
1
2
3
4
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=200A
Ic=100A
Ic= 50A
0.10
1.00
10.00
100.00
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
400
500
0
100
200
300
400
500
0
5
10
15
20
25
C
Gate charge : Qg [ nC ]
VGE
VCE
G
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