參數(shù)資料
型號: 7MBR100U2B-060(P)
英文描述: MCU CMOS 14LD 1K 20MHz, -40C to +85C, 14-SOIC 150mil, TUBE
中文描述: IGBT的
文件頁數(shù): 11/15頁
文件大?。?/td> 833K
代理商: 7MBR100U2B-060(P)
H04-004-03a
15
MS6M 0802
a
11
+VGE=15V,-VGE <= 15V, RG >= 33
,Tj <= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
Vcc=300V, VGE=±15V, Rg=33
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
[ Inverter ]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33
, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33
, Tj=125°C
10
100
1000
10000
0
50
100
150
200
S
Collector current : Ic [ A ]
toff
tf
tr
ton
10
100
1000
10000
0
50
100
150
200
S
Collector current : Ic [ A ]
tf
tr
toff
ton
10
100
1000
10000
10
100
1000
S
Gate resistance : Rg [
]
tr
tf
toff
ton
0
2
4
6
8
10
0
50
100
150
200
S
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°
Err(125°C)
Err(25°
Eoff(25°C)
0
5
10
15
10
100
1000
S
Gate resistance : Rg [
]
Eoff
Err
Eon
0
50
100
150
200
250
0
200
400
600
800
C
Collector - Emitter voltage : VCE [ V ]
相關(guān)PDF資料
PDF描述
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7MBR10NE-120 MCU CMOS 14LD 1K EPRM, 0C to +70C, 14-PDIP, TUBE
7MBR10NF-120 MCU CMOS 14LD 1K EPRM, -40C to +85C, 14-SOIC 150mil, TUBE
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