參數(shù)資料
型號(hào): 7MBP50RA-120
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: Intelligent Power Module ( R-Series )
中文描述: 智能功率模塊(R系列)
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 344K
代理商: 7MBP50RA-120
7MBP50TEA060
Electrical characteristics
(at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
I
CES
V
CE(sat)
Ic=50A
I
IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
R
ALM
Input zener voltage
Alarm signal hold time
Current limit resistor
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
I
ccp
I
CCN
V
in(th)
V
Z
t
ALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
18
65
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section
( Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
ton VDC=300V,Tj=125°C
toff IC=50A Fig.1, Fig.6
trr VDC=300V, IC=50A Fig.1, Fig.6
P
AV
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Thermal characteristics
( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *9
Inverter IGBT
FWD
Brake IGBT
Case to fin thermal resistance with compound
*9 For 1device, Case is under the device
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
-
-
-
-
-
-
-
0.87
1.263
0.87
0.05 -
°C/W
°C/W
°C/W
°C/W
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
V
DC
V
CC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
V
F
I
CES
V
CE(sat)
V
F
V
CE
=600V Vin terminal open.
-Ic=50A
Terminal
Chip
Terminal
Chip
I
OC
I
OC
t
DOC
t
SC
T
jOH
T
jH
V
UV
V
H
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
75
45
-
-
150
-
11.0
0.2
-
-
-
8
-
-
5
-
-
20
-
0.5
12.5
-
A
A
μs
μs
°C
°C
V
V
Noise Immunity
( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1μs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2μs, Fall time 50μs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0
-
-
±5.0
-
-
Item Condition Min. Typ. Max. Unit
kV
kV
-
-
400 V
16.5 V
3.0 Nm
13.5
2.5
15.0
-
Item Symbol Min. Typ. Max. Unit
Weight Wt - 270 - g
Weight
-
-
-
-
-
-
-
-
-
-
-
-
1.0
2.5
-
2.6
-
1.0
2.2
-
3.3
-
-
3.6
0.3
-
mA
V
2.0
-
1.6
-
-
1.75
-
1.9
-
-
-
-
V
mA
V
V
1.2
μs
-
-
30
mJ
Terminal
Chip
Terminal
Chip
V
CE
=600V Vin terminal open.
Ic=30A
-Ic=30A
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