參數(shù)資料
型號: 79LV0832RPQI-20
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM
中文描述: 256K X 32 EEPROM 3V, 200 ns, QFP96
封裝: QFP-96
文件頁數(shù): 13/21頁
文件大小: 458K
代理商: 79LV0832RPQI-20
M
13
01.10.05 Rev 8
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved
Low Voltage 8 Megabit (256K x 32-Bit) EEPROMMCM
79LV0832
high for 100μs after data input, the EEPROMenters the write mode automatically and the data input is written into the
EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determned. If EEPROM is set to read mode during a
write cycle, an inversion of the last dword of data to be loaded outputs fromI/O 7, 15, 23, 31 to indicate that the
EEPROMis performng a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determne the status of the EEPROM The RDY/Busy signal
goes low (V
OL)
after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( V
OH
).
RES Signal
When RES is LOW (V
L
), the EEPROM cannot be read or programmed. The EEPROMdata must be protected by
keeping RES low when V
CC
is power on and off. RES should be high (V
H
) during read and programmng operations.
Data Protection
To protect the data during operation and power on/off, the EEPROMhas the internal functions described below
1. Data Protection at V
CC
on/off
When V
CC
is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROMto
programmng mode by mstake. To prevent this unintentional programmng, the EEPROMmust be kept in an unprogrammable
state during V
CC
on/off by using a CPU reset signal to RES pin.
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