參數(shù)資料
型號: 79LV0408RT1FH-25
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: Low Voltage 4 Megabit (512k x 8-bit) EEPROM
中文描述: 512K X 8 EEPROM 3V, 250 ns, PDFP40
封裝: LDFP-40
文件頁數(shù): 6/20頁
文件大?。?/td> 353K
代理商: 79LV0408RT1FH-25
M
6
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
01.11.05 Rev 7
Byte Load Cycle
-200
-250
t
BLC
9, 10, 11
1
1
--
--
μs
Time to Device Busy
-200
-250
t
DB
9, 10, 11
150
150
--
--
ns
Write Start Time
3
-200
-250
t
DW
9, 10, 11
150
150
--
--
ns
RES to Write Setup Time
-200
-250
t
RP
9, 10, 11
100
100
--
--
μs
V
CC
to RES Setup Time
4
-200
-250
t
RES
9, 10, 11
1
1
--
--
μs
1. Use this divice in a longer cycle than this value.
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
T
ABLE
9. 79LV0408 M
ODE
S
ELECTION
1, 2
1. X = Dont care.
2. Refer to the recommended DC operating conditions.
3. For CE
1-4
only one CE can be used (“on”) at a time.
P
ARAMETER
CE
3
OE
WE
I/O
RES
RDY/BUSY
Read
Standby
Write
Deselect
Write Inhibit
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
D
OUT
High-Z
D
IN
High-Z
--
--
V
H
X
V
H
V
H
X
X
V
H
V
IL
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
Data Polling
Program
Data Out (I/O7)
High-Z
T
ABLE
8. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATIONS
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN1
M
AX
U
NIT
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