參數(shù)資料
型號: 79LV0408RT1FE-20
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: Low Voltage 4 Megabit (512k x 8-bit) EEPROM
中文描述: 512K X 8 EEPROM 3V, 200 ns, PDFP40
封裝: LDFP-40
文件頁數(shù): 4/20頁
文件大小: 353K
代理商: 79LV0408RT1FE-20
M
4
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
01.11.05 Rev 7
1. I
LI
on RES = 100 uA max.
2. Only on CE\ Active.
T
ABLE
7. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATIONS1
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timng - 0.8V/1.8V.
2.
t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Access Time CE = OE = V
IL
, WE = V
IH
-200
-250
t
ACC
9, 10, 11
--
--
200
250
ns
Chip Enable Access Time OE = V
IL
, WE = V
IH
-200
-250
t
CE
9, 10, 11
0
0
200
250
ns
Output Enable Access Time CE = V
IL
, WE = V
IH
-200
-250
t
OE
9, 10, 11
0
0
110
120
ns
Output Hold to Address Change CE = OE = V
IL
, WE = V
IH
-200
-250
t
OH
9, 10, 11
0
0-
--
--
ns
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-200
-250
t
DF
9, 10, 11
0
0
60
60
ns
CE = OE = V
IL
, WE = V
IH
-200
-250
t
DFR
9, 10, 11
0
0
300
350
RES to Output Delay CE = OE = V
IL
, WE = V
IH
3
-200
-250
t
RR
9, 10, 11
--
--
520
550
ns
T
ABLE
8. 79LV0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATIONS
(V
CC
= 3.3V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN1
M
AX
U
NIT
Address Setup Time
-200
-250
t
AS
9, 10, 11
0
0
--
--
ns
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