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參數(shù)資料
| 型號(hào)： | 79C0832XPQK-20 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (256K x 32-Bit) EEPROM MCM |
| 中文描述： | 256K X 32 EEPROM 5V MODULE, 200 ns, QFP96 |
| 封裝： | QFP-96 |
| 文件頁數(shù)： | 7/19頁 |
| 文件大?。?/td> | 477K |
| 代理商： | 79C0832XPQK-20 |
M
7
01.10.05 Rev 14
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved
8 Megabit (256K x 32-Bit) EEPROMMCM
79C0832
Data Latch Time
-150
-200
t
DL
9, 10, 11
300
400
--
--
ns
Byte Load Window
-150
-200
t
BL
9, 10, 11
100
200
--
--
μs
Byte Load Cycle
-150
-200
t
BLC
9, 10, 11
.55
.95
30
30
μs
Time to Device Busy
-150
-200
t
DB
9, 10, 11
120
170
--
--
ns
Write Start Time
3
-150
-200
t
DW
9, 10, 11
150
250
--
--
ns
RES to Write Setup Time
4
-150
-200
t
RP
9, 10, 11
100
200
--
--
μs
V
CC
to RES Setup Time
4
-150
-200
t
RES
9, 10, 11
1
3
--
--
μs
1. Use this device in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
T
ABLE
9. 79C0832 M
ODE
S
ELECTION
1
P
ARAMETER
CE
2
OE
WE
I/O
RES
RDY/BUSY
Read
Standby
Write
Deselect
Write Inhibit
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
D
OUT
High-Z
D
IN
High-Z
--
--
V
H
X
V
H
V
H
X
X
V
H
V
L
V
OH
V
OH
V
OH
--> V
OL
V
OH
--
--
V
OL
V
OH
Data Polling
ProgramReset
1. Refer to the recommended DC operating conditions.
2. For CE
0-1
only one CE can be used (“on”) at a time.
Data Out (I/O7)
High-Z
T
ABLE
8. 79C0832 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATION
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
1
M
AX
U
NITS
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