參數(shù)資料
型號(hào): 79C0408RT1FH-20
廠商: MAXWELL TECHNOLOGIES
元件分類: PROM
英文描述: 4 Megabit (512k x 8-bit) EEPROM MCM
中文描述: 512K X 8 EEPROM 5V MODULE, 200 ns, DFP40
封裝: DFP-40
文件頁數(shù): 13/20頁
文件大?。?/td> 353K
代理商: 79C0408RT1FH-20
M
13
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROMMCM
79C0408
10.13.04 Rev 15
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determned. If the EEPROMis set to read mode during a
write cycle, an inversion of the last byte of data to be loaded output is fromI/O 7 to indicate that the EEPROM is per-
formng a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determne the status of the EEPROM The RDY/Busy signal
has high impedance except in write cycle and is lowered to V
OL
after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROMcannot be read and programmed. Therefore, data can be protected by keeping
RES low when V
CC
is switched. RES should be kept high during read and programmng because it doesnt provide a
latch function.
Data Protection
To protect the data during operation and power on/off, the EEPROMhas the internal functions described below
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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