參數(shù)資料
型號: 784216AY
廠商: NEC Corp.
英文描述: MOS INTEGRATED CIRCUIT
中文描述: 馬鞍山集成電路
文件頁數(shù): 76/100頁
文件大?。?/td> 564K
代理商: 784216AY
Data Sheet U14121EJ2V0DS00
76
μ
PD784214A, 784215A, 784216A, 784217A, 784218A, 784214AY, 784215AY, 784216AY, 784217AY, 784218AY
AC Characteristics
(1) Read/write operation (2/2)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
= 5.0 V
±
10%
0.5T
2
ns
V
DD
= 3.0 V
±
10%
0.5T
12
ns
Address active time from RD
t
DRA
V
DD
= 2.0 V
±
10%
0.5T
35
ns
V
DD
= 5.0 V
±
10%
0.5T
9
ns
V
DD
= 3.0 V
±
10%
0.5T
9
ns
Delay time from RD
to ASTB
t
DRST
V
DD
= 2.0 V
±
10%
0.5T
40
ns
V
DD
= 5.0 V
±
10%
(1.5
+
n)T
25
ns
V
DD
= 3.0 V
±
10%
(1.5
+
n)T
30
ns
RD low-level width
t
WRL
V
DD
= 2.0 V
±
10%
(1.5
+
n)T
25
ns
V
DD
= 5.0 V
±
10%
(1
+
a)T
24
ns
V
DD
= 3.0 V
±
10%
(1
+
a)T
34
ns
Delay time from address to WR
t
DAW
V
DD
= 2.0 V
±
10%
(1
+
a)T
70
ns
V
DD
= 5.0 V
±
10%
0.5T
14
ns
V
DD
= 3.0 V
±
10%
0.5T
14
ns
Address hold time (from WR
)
t
HRD
V
DD
= 2.0 V
±
10%
0.5T
14
ns
V
DD
= 5.0 V
±
10%
0.5T
+
15
ns
V
DD
= 3.0 V
±
10%
0.5T
+
30
ns
Delay time from ASTB
to data
output
t
DSTOD
V
DD
= 2.0 V
±
10%
0.5T
+
240
ns
V
DD
= 5.0 V
±
10%
0.5T
30
ns
V
DD
= 3.0 V
±
10%
0.5T
30
ns
Delay time from WR
to data
output
t
DWOD
V
DD
= 2.0 V
±
10%
0.5T
30
ns
V
DD
= 5.0 V
±
10%
0.5T
9
ns
V
DD
= 3.0 V
±
10%
0.5T
9
ns
Delay time from ASTB
to WR
t
DSTW
V
DD
= 2.0 V
±
10%
0.5T
20
ns
V
DD
= 5.0 V
±
10%
(1.5
+
n)T
20
ns
V
DD
= 3.0 V
±
10%
(1.5
+
n)T
25
ns
Data setup time (to WR
)
t
SODWR
V
DD
= 2.0 V
±
10%
(1.5
+
n)T
70
ns
V
DD
= 5.0 V
±
10%
0.5T
14
ns
V
DD
= 3.0 V
±
10%
0.5T
14
ns
Data hold time (from WR
)
t
HWOD
V
DD
= 2.0 V
±
10%
0.5T
50
ns
V
DD
= 5.0 V
±
10%
0.5T
9
ns
V
DD
= 3.0 V
±
10%
0.5T
9
ns
Delay time from WR
to ASTB
t
DWST
V
DD
= 2.0 V
±
10%
0.5T
30
ns
V
DD
= 5.0 V
±
10%
(1.5
+
n)T
25
ns
V
DD
= 3.0 V
±
10%
(1.5
+
n)T
30
ns
WR low-level width
t
WWL
V
DD
= 2.0 V
±
10%
(1.5
+
n)T
30
ns
Remark
T: t
CYK
= 1/f
XX
(f
XX
: main system clock frequency)
a: 1 (during address wait), otherwise, 0
n: Number of wait states (n
0)
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