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參數(shù)資料
| 型號(hào)： | 7705201EC |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 多路復(fù)用及模擬開(kāi)關(guān) |
| 英文描述： | 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16 |
| 封裝： | SIDE BRAZED, DIP-16 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | 7705201EC |
DG508A_MIL/509A_MIL
Vishay Siliconix
Document Number: 70067
S-00405—Rev. C, 21-Feb-00
www.vishay.com
S FaxBack 408-970-5600
5-3
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V–
V+
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa, VS, VD
(V–) –2 V to (V+) +2 V or
. . . . . . . . . . . . . . . . . . . . . . . .
20 mA, whichever occurs first
Current (Any Terminal, Except S or D)
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current, S or D
20 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max)
40 mA
. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(K Suffix)
–65 to 150
_C
. . . . . . . . . . . . . . . . . . .
(J and Y Suffix)
–65 to 125
_C
. . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin CerDIPc
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LCC-20c
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads soldered or welded to PC board.
c.
Derate 12 mW/
_C above 75_C.
SPECIFICATIONSa
P
Sb l
Test Conditions
Unless Otherwise Specified
T
b
A Suffix
–55 to 125
_C
Ui
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
–15
15
V
Drain-Source
On-Resistance
rDS(on)
VD = "10 V, IS = –200 mA
Room
Full
240
400
500
W
rDS(on) Match
DrDS(on)
–10 V < VS < 10 V
Room
6
%
Source Off
Leakage Current
IS(off)
VEN = 0 V, VS = "10 V
VD = #10 V
Room
Full
–1
–50
1
50
A
Drain Off
Lk
C
t
ID(off)
VEN = 0 V
VD = "10 V
DG508A_MIL
Room
Full
–10
–200
10
200
A
Leakage Current
ID(off)
VD = "10 V
VS = #10 V
DG509A_MIL
Room
Full
–10
–100
10
100
nA
Drain On
Lk
C
t
ID(on)
VS = VD = "10 V
DG508A_MIL
Room
Full
–10
–200
10
200
Leakage Current
ID(on)
VS = VD = "10 V
DG509A_MIL
Room
Full
–10
–100
10
100
Digital Control
Logic Input Current
It V lt
Hi h
IAH
VA = 2.4 V
Room
Full
–10
–30
–0.002
A
gp
Input Voltage High
IAH
VA = 15 V
Room
Full
0.006
10
30
mA
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
Room
Full
–10
–30
–0.002
Dynamic Characteristics
Transition Time
tTRANS
See Figure 2
Room
0.6
1.0
Break-Before-Make Time
tOPEN
See Figure 4
Room
0.2
ms
Enable Turn-On Time
tON(EN)
See Figure 3
Room
1
1.5
ms
Enable Turn-Off Time
tOFF(EN)
See Figure 3
Room
0.4
1.0
Charge Injection
Q
See Figure 5
Room
6
pC
Off Isolation
OIRR
VEN = 0 V, RL = 1 kW, CL = 15 pF
VS = 7 VRMS, f = 500 kHz
Room
68
dB
Logic Input Capacitance
Cin
f = 1 MHz
Room
8
F
Source Off Capacitance
CS(off)
VEN = 0 V, VS = 0 V, f = 140 kHz
Room
6
pF
Drain Off Capacitance
CD(off)
VEN = 0 V, VD = 0 V
f
140 kH
DG508A_MIL
Room
25
pF
Drain Off Capacitance
CD(off)
EN
,
D
f = 140 kHz
DG509A_MIL
Room
12
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