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參數(shù)資料
| 型號： | 7705201EC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers |
| 中文描述： | 單8-Ch/Differential 4通道CMOS模擬多路復(fù)用器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 7705201EC |
DG508A_MIL/509A_MIL
Vishay Siliconix
Document Number: 70067
S-00405—Rev. C, 21-Feb-00
www.vishay.com FaxBack 408-970-5600
5-3
Voltage Referenced to V–
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . .
44 V
25 V
(V–) –2 V to (V+) +2 V or
20 mA, whichever occurs first
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (Any Terminal, Except S or D)
Continuous Current, S or D
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max)
30 mA
20 mA
40 mA
. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(K Suffix)
(J and Y Suffix)
–65 to 150 C
–65 to 125 C
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
Power Dissipation (Package)
b
16-Pin CerDIP
c
LCC-20
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
, D
or IN
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads soldered or welded to PC board.
c.
Derate 12 mW/ C above 75 C.
900 mW
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
Symbol
b l
Test Conditions
Unless Otherwise Specified
Temp
b
A Suffix
–55 to 125 C
U i
Unit
V+ = 15 V, V– = –15 V
V
IN
= 2.4 V, 0.8 V
Min
d
Typ
c
Max
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
–15
15
V
Drain-Source
On-Resistance
r
DS(on)
V
D
=
10 V, I
S
= –200 A
Room
Full
240
400
500
r
DS(on)
Match
Source Off
Leakage Current
r
DS(on)
–10 V < V
S
< 10 V
V
EN
= 0 V, V
S
=
V
D
=
Room
6
%
I
S(off)
10 V
10 V
Room
Full
–1
–50
1
50
Drain Off
Leakage Current
I
D(off)
V
EN
= 0 V
V
D
V
S
=
10 V
10 V
DG508A_MIL
Room
Full
–10
–200
10
200
DG509A_MIL
Room
Full
–10
–100
10
100
nA
Drain On
Leakage Current
I
D(on)
V
S
= V
D
=
10 V
DG508A_MIL
Room
Full
–10
–200
10
200
DG509A_MIL
Room
Full
–10
–100
10
100
Digital Control
Logic Input Current
t V lt
Input Voltage High
Hi h
I
AH
V
A
= 2.4 V
Room
Full
–10
–30
–0.002
A
V
A
= 15 V
Room
Full
0.006
10
30
Logic Input Current
Input Voltage Low
I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V
Room
Full
–10
–30
–0.002
Dynamic Characteristics
Transition Time
t
TRANS
t
OPEN
t
ON(EN)
t
OFF(EN)
Q
See Figure 2
Room
0.6
1.0
Break-Before-Make Time
See Figure 4
Room
0.2
s
Enable Turn-On Time
See Figure 3
Room
1
1.5
Enable Turn-Off Time
Room
0.4
1.0
Charge Injection
See Figure 5
Room
6
pC
Off Isolation
OIRR
V
EN
= 0 V, R
L
= 1 k
V
S
= 7 V
RMS
, f = 500 kHz
f = 1 MHz
, C
= 15 pF
Room
68
dB
Logic Input Capacitance
C
in
C
S(off)
Room
8
Source Off Capacitance
V
EN
= 0 V, V
S
= 0 V, f = 140 kHz
Room
6
pF
Drain Off Capacitance
C
D(off)
V
= 0 V, V
= 0 V
f = 140 kHz
DG508A_MIL
Room
25
EN
DG509A_MIL
Room
12
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