參數(shù)資料
型號: 75GB170DN2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/9頁
文件大?。?/td> 237K
代理商: 75GB170DN2
1
Oct-21-1997
BSM 75 GB 120 DN2
IGBT Power Module
Half-bridge
Including fast free-wheeling diodes
Package with insulated metal base plate
Type
BSM 75 GB 120 DN2
V
CE
1200V 105A
I
C
Package
HALF-BRIDGE 1
Ordering Code
C67076-A2106-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
75
105
A
I
Cpuls
150
210
P
tot
625
+ 150
W
T
j
T
stg
°C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
thJC
R
thJC
D
V
is
-
-
-
-
0.2
0.5
2500
20
11
F
K/W
Vac
mm
sec
40 / 125 / 56
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