參數(shù)資料
型號: 74LVT374PW,112
廠商: NXP Semiconductors
文件頁數(shù): 11/16頁
文件大?。?/td> 0K
描述: IC OCT D FF POS-EDG TRIG 20TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 75
系列: 74LVT
功能: 標(biāo)準(zhǔn)
類型: D 型總線
輸出類型: 非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 8
頻率 - 時(shí)鐘: 200MHz
延遲時(shí)間 - 傳輸: 3.5ns
觸發(fā)器類型: 正邊沿
輸出電流高,低: 32mA,64mA
電源電壓: 2.7 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
包裝: 管件
其它名稱: 74LVT374PW
74LVT374PW-ND
935213340112
74LVT374
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 22 November 2011
4 of 16
NXP Semiconductors
74LVT374
3.3 V octal D-type flip-flop; 3-state
6.
Functional description
6.1 Function table
[1]
H = HIGH voltage level;
L = LOW voltage level;
= LOW-to-HIGH clock transition;
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition;
l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition;
Z = high-impedance OFF-state;
NC = no change;
X = don’t care.
7.
Limiting values
[1]
The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[2]
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability.
[3]
For SO20 packages: above 70
C derate linearly with 8 mW/K.
For SSOP20 and TSSOP20 packages: above 60
C derate linearly with 5.5 mW/K.
For DHVQFN20 packages: above 60
C derate linearly with 4.5 mW/K.
Table 3.
Function table [1]
Operating mode
Control
Input
Internal register Output
OE
CP
Dn
Qn
Load and read register
L
lL
L
hH
H
Hold
L
NC
X
NC
Disable outputs
H
L or H
X
NC
Z
Dn
Z
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+4.6
V
VI
input voltage
0.5
+7.0
V
VO
output voltage
output in OFF-state or HIGH-state
0.5
+7.0
V
IIK
input clamping current
VI <0V
-
50
mA
IOK
output clamping current
VO <0V
-
50
mA
IO
output current
output in LOW-state
-
128
mA
output in HIGH-state
-
64
mA
Tstg
storage temperature
65
+150
C
Tj
junction temperature
150
C
Ptot
total power dissipation
Tamb = 40 C to +85 C
500
mW
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