參數(shù)資料
型號: 74LVT2952D,118
廠商: NXP Semiconductors
文件頁數(shù): 13/17頁
文件大?。?/td> 0K
描述: IC TRANSCEIVER 8BIT N-INV 24SOIC
產(chǎn)品培訓(xùn)模塊: Logic Packages
標準包裝: 1,000
系列: 74LVT
邏輯類型: 收發(fā)器,非反相
元件數(shù): 1
每個元件的位元數(shù): 8
輸出電流高,低: 32mA,64mA
電源電壓: 2.7 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SO
包裝: 帶卷 (TR)
其它名稱: 74LVT2952D-T
74LVT2952D-T-ND
935180840118
74LVT2952
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 11 September 2013
5 of 17
NXP Semiconductors
74LVT2952
3.3 V Octal registered transceiver; 3-State
7.
Limiting values
[1]
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
[2]
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
[3]
The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[4]
For SO20 packages: above 70
C derate linearly with 8 mW/K.
For SSOP20 and TSSOP20 packages: above 60
C derate linearly with 5.5 mW/K.
8.
Recommended operating conditions
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).[1][2]
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+4.6
V
VI
input voltage
0.5
7.0
V
VO
output voltage
output in OFF or HIGH state
0.5
+7
V
IIK
input clamping current
VI < 0 V
50
-
mA
IOK
output clamping current
VO < 0 V
50
-
mA
IO
output current
output in LOW state
-
128
mA
output in HIGH state
64
-
mA
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
+150
C
Ptot
total power dissipation
Tamb = 40 C to +85 C
-
500
mW
Table 6.
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
2.7
3.6
V
VI
input voltage
0
5.5
V
IOH
HIGH-level output current
-
32
mA
IOL
LOW-level output current
-
32
mA
current duty cycle
50 %; f
i 1kHz
-
64
mA
Tamb
ambient temperature
in free air
40
+85
C
t/V
input transition rise and fall rate
output enabled
-
10
ns/V
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