參數(shù)資料
型號(hào): 74LVT10PWDH
廠商: NXP SEMICONDUCTORS
元件分類: 通用總線功能
英文描述: 3.3V Triple 3-input NAND gate
中文描述: LVT SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14
封裝: 4.40 MM, PLASTIC, TSSOP-14
文件頁數(shù): 3/10頁
文件大?。?/td> 79K
代理商: 74LVT10PWDH
Philips Semiconductors
Product specification
74LVT10
3.3V Triple 3-input NAND gate
1996 May 10
3
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
–0.5 to +4.6
V
I
IK
DC input diode current
V
I
< 0
–50
mA
V
I
DC input voltage
3
–0.5 to +7.0
V
I
OK
DC output diode current
V
O
< 0
–50
mA
V
OUT
DC output voltage
3
Output in Off or High state
–0.5 to +7.0
V
I
OUT
DC output current
Output in High state
–32
mA
Output in Low state
64
T
stg
Storage temperature range
–65 to 150
°
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
MIN
MAX
V
CC
DC supply voltage
2.7
3.6
V
V
I
Input voltage
0
5.5
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level Input voltage
0.8
V
I
OH
High-level output current
–20
mA
I
OL
Low-level output current
32
mA
t/
v
Input transition rise or fall rate; Outputs enabled
10
ns/V
T
amb
Operating free-air temperature range
–40
+85
°
C
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