參數(shù)資料
型號： 74LVC3G06
廠商： NXP Semiconductors N.V.
英文描述： Triple inverter with open-drain output
中文描述： 3個漏極開路輸出的反相器
文件頁數(shù)： 6/14頁
文件大小： 79K
代理商： 74LVC3G06
9397 750 14545
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 31 January 2005
6 of 14
Philips Semiconductors
74LVC3G34
Triple buffer gate
[1]
All typical values are measured at T
amb
= 25
°
C.
12. Dynamic characteristics
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
=
100
μ
A; V
CC
= 1.65 V to 5.5 V
I
O
=
4 mA; V
CC
= 1.65 V
I
O
=
8 mA; V
CC
= 2.3 V
I
O
=
12 mA; V
CC
= 2.7 V
I
O
=
24 mA; V
CC
= 3.0 V
I
O
=
32 mA; V
CC
= 4.5 V
V
I
= V
IH
or V
IL
I
O
= 100
μ
A; V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
V
CC
= 5.5 V; V
I
= 5.5 Vor GND
V
CC
0.1
0.95
1.7
1.9
2.0
3.4
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
OL
LOW-level output voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.70
0.45
0.60
0.80
0.80
±
20
±
20
40
5000
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
I
LI
I
off
I
CC
I
CC
input leakage current
power-off leakage current V
CC
= 0 V; V
I
or V
O
= 5.5 V
quiescent supply current
additional quiescent
supply current per pin
V
CC
= 5.5 V; V
I
= V
CC
or GND; I
O
= 0 A
V
CC
= 2.3 V to 5.5 V; V
I
= V
CC
0.6 V;
I
O
= 0 A
Table 8:
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Static characteristics
…continued
Min
Typ
Max
Unit
Table 9:
GND = 0 V; test circuit see
Figure 6
.
Symbol
Parameter
T
amb
=
40
°
C to +85
°
C
[1]
t
PHL
, t
PLH
propagation delay
input nA to output nY
Dynamic characteristics
Conditions
Min
Typ
Max
Unit
see
Figure 5
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V
V
CC
= 3.0 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 3.3 V
1.0
0.5
0.5
0.5
0.5
3.8
2.4
2.5
2.2
1.9
14
8.6
4.4
5.0
4.1
3.2
-
ns
ns
ns
ns
ns
pF
C
PD
power dissipation
capacitance per gate
[2] [3]
-
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