參數(shù)資料
型號(hào): 74LVC2G08DP
廠商: Panasonic Corporation
英文描述: Hex Buffers And Line Drivers With 3-State Outputs 16-SOIC -40 to 85
中文描述: 3態(tài)輸出六緩沖線性驅(qū)動(dòng)器 SOIC-16封裝 工作溫度:-40℃_85℃
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 87K
代理商: 74LVC2G08DP
2004 Sep 15
2
Philips Semiconductors
Product specification
Dual 2-input AND gate
74LVC2G08
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs and outputs for interfacing with 5 V
logic
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
– JESD8B/JESD36 (2.7 V to 3.6 V).
±
24 mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple packages options
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
40
°
C to +85
°
C and
40
°
C to +125
°
C.
DESCRIPTION
The 74LVC2G08 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of these devices as translators in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G08 provides the 2-input AND gate function.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
2.5 ns.
Notes
1.
C
PD
is used to determine the dynamic power dissipation (P
D
in
μ
W).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
The condition is V
I
= GND to V
CC
.
2.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
propagation delay inputs nA, nB to
outputs nY
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 k
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
2.2
V
CC
= 2.7 V; C
L
= 50 pF; R
L
= 500
2.5
V
CC
= 3.3 V; C
L
= 50 pF; R
L
= 500
2.1
V
CC
= 5.0 V; C
L
= 50 pF; R
L
= 500
1.7
3.2
ns
ns
ns
ns
ns
pF
pF
C
I
C
PD
input capacitance
power dissipation capacitance per gate
2.5
14.4
V
CC
= 3.3 V; notes 1 and 2
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