參數(shù)資料
型號(hào)： 74LV259
廠商： NXP Semiconductors N.V.
英文描述： 8-bit addressable latch
中文描述： 8位可尋址鎖存器
文件頁數(shù)： 5/14頁
文件大?。?/td> 126K
代理商： 74LV259
Philips Semiconductors
Product specification
74LV259
8-bit addressable latch
1998 May 20
5
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
I
IK
I
OK
DC supply voltage
–0.5 to +4.6
V
DC input diode current
V
I
< –0.5 or V
I
> V
CC
+ 0.5V
V
O
< –0.5 or V
O
> V
CC
+ 0.5V
20
mA
DC output diode current
50
mA
I
O
DC output source or sink current
– standard outputs
–0.5V < V
O
< V
CC
+ 0.5V
25
mA
I
GND
,
I
CC
T
stg
DC V
CC
or GND current for types with
– standard outputs
50
mA
Storage temperature range
–65 to +150
°
C
P
TOT
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125
°
C
above +70
°
C derate linearly with 12 mW/K
above +70
°
C derate linearly with 8 mW/K
above +60
°
C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
°
C to +85
°
C
TYP
1
-40
°
C to +125
°
C
MIN
0.9
UNIT
MIN
0.9
MAX
MAX
HIGH level I
voltage
t
V
CC
= 1.2 V
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 1.2 V
V
CC
= 2.0 V
V
CC
= 2.7 to 3.6 V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
IH
1.4
1.4
V
2.0
2.0
LOW level I
voltage
t
0.3
0.3
V
IL
0.6
0.6
V
0.8
0.8
1.2
V
OH
HIGH level output
voltage; all outputs
1.8
2.0
1.8
V
2.5
2.7
2.5
2.8
3.0
2.8
V
OH
HIGH level output
voltage;
STANDARD
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
–I
O
= 6mA
2.40
2.82
2.20
V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
0
V
OL
LOW level output
voltage; all outputs
0
0.2
0.2
V
0
0.2
0.2
0
0.2
0.2
V
OL
LOW level output
voltage;
STANDARD
outputs
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 6mA
0.25
0.40
0.50
V
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