參數(shù)資料
型號(hào): 74HCT646D,652
廠商: NXP Semiconductors
文件頁數(shù): 7/11頁
文件大?。?/td> 0K
描述: IC TRANSCVR 3-ST 8BIT INV 24SOIC
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 1,200
系列: 74HCT
邏輯類型: 收發(fā)器,反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 8
輸出電流高,低: 6mA,6mA
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SO
包裝: 管件
其它名稱: 74HCT646D
74HCT646D-ND
933715640652
74AHC_AHCT1G08_6
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 06 — 29 June 2007
5 of 11
NXP Semiconductors
74AHC1G08; 74AHCT1G08
2-input AND gate
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
ICC
supply current VI =VCC or GND; IO = 0 A;
VCC = 5.5 V
-
1.0
-
10
-
40
A
ICC
additional
supply current
per input pin; VI = 3.4 V;
other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
-
1.35
-
1.5
-
1.5
mA
CI
input
capacitance
-
1.5
10
-
10
-
10
pF
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol
Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G08
tpd
propagation
delay
A and B to Y;
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
4.6
8.8
1.0
10.5
1.0
12.0
ns
CL = 50 pF
-
6.5
12.3
1.0
14.0
1.0
16.0
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.2
5.9
1.0
7.0
1.0
8.0
ns
CL = 50 pF
-
4.6
7.9
1.0
9.0
1.0
10.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-17-
-
pF
For type 74AHCT1G08
tpd
propagation
delay
A and B to Y;
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.6
6.2
1.0
7.1
1.0
8.0
ns
CL = 50 pF
-
5.1
7.9
1.0
9.0
1.0
10.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-19-
-
pF
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