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參數(shù)資料
| 型號： | 74HCT4016DB |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85 |
| 中文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO14 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大小： | 109K |
| 代理商： | 74HCT4016DB |
December 1990
10
Philips Semiconductors
Product specification
Quad bilateral switches
74HC/HCT4016
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF
ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT
Recommended conditions and typical values
GND = 0 V; t
r
= t
f
= 6 ns
Notes
1.
2.
3.
4.
V
is
is the input voltage at a Y
n
or Z
n
terminal, whichever is assigned as an input.
V
os
is the output voltage at a Y
n
or Z
n
terminal, whichever is assigned as an output.
Adjust input voltage V
is
to 0 dBm level (0 dBm = 1 mW into 600
).
Adjust input voltage V
is
to 0 dBm level at V
os
for 1 MHz (0 dBm = 1 mW into 50
).
SYMBOL PARAMETER
T
amb
(
°
C)
UNIT
TEST CONDITIONS
74HCT
V
CC
(V)
OTHER
+
25
40 to
+
85
40 to
+
125
min.
typ.
max. min.
max.
min.
max.
t
PHL
/ t
PLH
propagation delay
V
is
to V
os
turn “ON” time
E
n
to V
os
turn “ON” time
E
n
to V
os
turn “OFF” time
E
n
to V
os
6
12
15
18
ns
4.5
R
L
=
∞
; C
L
= 50 pF
(see Fig.16)
R
L
= 1 k
; C
L
= 50 pF
(see Figs 17 and 18)
R
L
= 1 k
; C
L
= 50 pF
(see Figs 17 and 18)
R
L
= 1 k
; C
L
= 50 pF
(see Figs 17 and 18)
t
PZH
19
35
44
53
ns
4.5
t
PZL
20
35
44
53
ns
4.5
t
PHZ
/ t
PLZ
23
35
44
53
ns
4.5
SYMBOL
PARAMETER
typ.
UNIT
V
CC
(V)
V
is(p-p)
(V)
CONDITIONS
sine-wave distortion
f = 1 kHz
sine-wave distortion
f = 10 kHz
switch “OFF” signal
feed-through
crosstalk between
any two switches
crosstalk voltage between
enable or address input
to any switch
(peak-to-peak value)
minimum frequency response
(
3dB)
maximum switch capacitance
0.80
0.40
2.40
1.20
50
50
60
60
110
220
%
%
%
%
dB
dB
dB
dB
mV
mV
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
4.0
8.0
4.0
8.0
note 3
R
L
= 10 k
; C
L
= 50 pF
(see Fig.14)
R
L
= 10 k
; C
L
= 50 pF
(see Fig.14)
R
L
= 600
; C
L
= 50 pF;
f = 1 MHz (see Figs 10 and 15)
R
L
= 600
; C
L
= 50 pF;
f = 1 MHz (see Fig.12)
R
L
= 600
; C
L
= 50 pF;
f = 1 MHz (E
n
, square wave
between V
CC
and GND,
t
r
= t
f
= 6 ns) (see Fig.13)
R
L
= 50
; C
L
= 10 pF
(see Figs 11 and 14)
note 3
V
(p-p)
f
max
150
160
5
MHz
MHz
pF
4.5
9.0
note 4
C
S
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