參數(shù)資料
型號： 74HCT20D-T
英文描述： Dual 4-input NAND Gate
中文描述： 雙4輸入與非門
文件頁數(shù)： 8/16頁
文件大小： 83K
代理商： 74HCT20D-T
2003 May 14
8
Philips Semiconductors
Product specification
Dual 2-input NOR gate
74HC2G02; 74HCT2G02
Type 74HCT2G02
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Note
1.
All typical values are measured at T
amb
= 25
°
C.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
OTHER
V
CC
(V)
T
amb
=
40 to +85
°
C;
note 1
V
IH
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
4.5 to 5.5
2.0
1.6
V
V
IL
4.5 to 5.5
1.2
0.8
V
V
OH
V
I
= V
IH
or V
IL
I
O
=
20
μ
A
I
O
=
4.0
μ
A
V
I
= V
IH
or V
IL
I
O
= 20
μ
A
I
O
= 4.0
μ
A
V
I
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
2.1 V;
I
O
= 0
4.5
4.5
4.4
4.13
4.5
4.32
V
V
V
OL
LOW-level output
voltage
4.5
4.5
5.5
5.5
0
0.15
0.1
0.33
±
1.0
10
V
V
μ
A
μ
A
I
LI
I
CC
input leakage current
quiescent supply
current
additional supply
current per input
I
CC
4.5 to 5.5
375
μ
A
T
amb
=
40 to +125
°
C
V
IH
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
4.5 to 5.5
2.0
V
V
IL
4.5 to 5.5
0.8
V
V
OH
V
I
= V
IH
or V
IL
I
O
=
20
μ
A
I
O
=
4.0
μ
A
V
I
= V
IH
or V
IL
I
O
= 20
μ
A
I
O
= 4.0
μ
A
V
I
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
V
I
= V
CC
2.1 V;
I
O
= 0
4.5
4.5
4.4
3.7
V
V
V
OL
LOW-level output
voltage
4.5
4.5
5.5
5.5
0.1
0.4
±
1.0
20
V
V
μ
A
μ
A
I
LI
I
CC
input leakage current
quiescent supply
current
additional supply
current per input
I
CC
4.5 to 5.5
410
μ
A
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