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參數(shù)資料
| 型號： | 74HC1G66GW-G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO5 |
| 封裝： | 1.25 MM, PLASTIC, SOT-353, MO-203, SC-88A, TSSOP-5 |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 74HC1G66GW-G |
74HC_HCT1G66_4
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
10 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
[1]
There is no constraint on tr, tf with a 50% duty factor when measuring fmax.
11.2 Additional dynamic characteristics
Test data is given in Table 11.
Denitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
VM
tW
10 %
90 %
0 V
VI
negative
pulse
positive
pulse
0 V
VM
90 %
10 %
tf
tr
tf
001aad983
DUT
VCC
VI
VO
RT
RL
S1
CL
open
G
Table 11.
Test data
Type
Input
Load
S1 position
VI
CL
RL
tPHL, tPLH
tPZH, tPHZ
tPZL, tPLZ
74HC1G66
GND to VCC
6 ns
50 pF, 15 pF
1 k
, ∞
open
GND
VCC
74HCT1G66
GND to 3 V
6 ns
50 pF, 15 pF
1 k
, ∞
open
GND
VCC
Table 12.
Additional dynamic characteristics for 74HC1G66 and 74HCT1G66
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specied. All typical values are measured at Tamb =25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
THD
total harmonic
distortion
%
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.04
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.02
-
%
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06
-
%
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