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參數(shù)資料
| 型號： | 74F413D-MQB |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Shielded Multiconductor Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyolefin; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Shielding Coverage:100% RoHS Compliant: Yes |
| 中文描述： | 64 × 4先入先出緩沖器存儲器與并行I / O |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | 74F413D-MQB |
TL/F/9541
5
January 1995
54F/74F413
64 x 4 First-In First-Out Buffer Memory with Parallel I/O
General Description
The ’F413 is an expandable fall-through type high-speed
First-In First-Out (FIFO) buffer memory organized as 64
words by four bits. The 4-bit input and output registers rec-
ord and transmit, respectively, asynchronous data in parallel
form. Control pins on the input and output allow for hand-
shaking and expansion. The 4-bit wide, 62-bit deep fall-
through stack has self-contained control logic.
Features
Y
Separate input and output clocks
Y
Parallel input and output
Y
Expandable without external logic
Y
15 MHz data rate
Y
Supply current 160 mA max
Y
Available in SOIC, (300 mil only)
Commercial
Military
Package
Number
Package Description
74F413PC
N16E
16-Lead (0.300
×
Wide) Molded Dual-In-Line
54F413DM (Note 1)
J16A
16-Lead Ceramic Dual-In-Line
Note 1:
Military grade device with environmental and burn-in processing. Use suffix
e
DMQB.
Logic Symbol
TL/F/9541–1
Connection Diagram
Pin Assignment
for DIP
TL/F/9541–2
TRI-STATE
é
is a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation
RRD-B30M105/Printed in U. S. A.
相關PDF資料 |
PDF描述 |
|---|---|
| 74F413P-MQB | 64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F413PC | 64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F413P-CQB | 64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F413 | 64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F413PC | 64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 74F413PC | 功能描述:先進先出 64x4 先進先出 Buffer Mem RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲容量:4 Mbit 定時類型:Synchronous 組織:256 K x 18 最大時鐘頻率:100 MHz 訪問時間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝: |
| 74F413P-CQB | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F413P-MQB | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
| 74F420 WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 74F433 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:First-In First-Out (FIFO) Buffer Memory |
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