參數(shù)資料
型號: 74AUP1G79GV,125
廠商: NXP Semiconductors
文件頁數(shù): 1/24頁
文件大?。?/td> 0K
描述: IC D F-F POS-EDGE TRIGGER SOT753
標準包裝: 1
系列: 74AUP
功能: 標準
類型: D 型
輸出類型: 非反相
元件數(shù): 1
每個元件的位元數(shù): 1
頻率 - 時鐘: 550MHz
延遲時間 - 傳輸: 2ns
觸發(fā)器類型: 正邊沿
輸出電流高,低: 4mA,4mA
電源電壓: 0.8 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: SC-74A,SOT-753
包裝: 標準包裝
其它名稱: 568-5393-6
1.
General description
The 74AUP1G79 provides the single positive-edge triggered D-type flip-flop. Information
on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock
pulse. The D input must be stable one setup time prior to the LOW-to-HIGH clock
transition for predictable operation.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; ICC = 0.9 A (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
Multiple package options
Specified from
40 Cto+85 C and 40 Cto+125 C
74AUP1G79
Low-power D-type flip-flop; positive-edge trigger
Rev. 6 — 28 June 2012
Product data sheet
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