參數(shù)資料
型號(hào)： 74AHC3GU04
廠商： NXP Semiconductors N.V.
英文描述： high-speed Si-gate CMOS device
中文描述： 高速硅柵CMOS器件
文件頁數(shù)： 7/17頁
文件大?。?/td> 97K
代理商： 74AHC3GU04
9397 750 12754
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 March 2004
7 of 17
Philips Semiconductors
74AHC3GU04
Inverter
12. Dynamic characteristics
[1]
Typical values are measured at V
CC
= 3.3 V.
Typical values are measured at V
CC
= 5.0 V.
[2]
Table 9:
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); t
r
= t
f
≤
3.0 ns. See
Figure 6
.
Symbol
Parameter
Conditions
T
amb
= 25
°
C
t
PHL,
t
PLH
propagation delay nA to nY
see
Figure 5
V
CC
= 3.0 V to 3.6 V; C
L
= 15 pF
V
CC
= 3.0 V to 3.6 V; C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 15 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 50 pF
T
amb
=
40
°
C to 85
°
C
t
PHL,
t
PLH
propagation delay nA to nY
see
Figure 5
V
CC
= 3.0 V to 3.6 V; C
L
= 15 pF
V
CC
= 3.0 V to 3.6 V; C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 15 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 50 pF
T
amb
=
40
°
C to 125
°
C
t
PHL,
t
PLH
propagation delay nA to nY
see
Figure 5
V
CC
= 3.0 V to 3.6 V; C
L
= 15 pF
V
CC
= 3.0 V to 3.6 V; C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 15 pF
V
CC
= 4.5 V to 5.5 V; C
L
= 50 pF
Dynamic characteristics
Min
Typ
Max
Unit
[1]
-
3.0
4.3
2.5
3.5
7.1
10.6
5.5
7.0
ns
ns
ns
ns
[1]
-
[2]
-
[2]
-
1.0
1.0
1.0
1.0
-
-
-
-
8.5
12.0
6.0
8.0
ns
ns
ns
ns
1.0
1.0
1.0
1.0
-
-
-
-
10.0
13.5
7.0
9.0
ns
ns
ns
ns
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