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| 型號： | 73S1210F-EB-LITE |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 32/126頁 |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVAL 73S1210F LITE DOC/CBL |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 1 |
| 系列： | * |
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DS_1210F_001
73S1210F Data Sheet
Rev. 1.4
13
Table 3: Flash Special Function Registers
Register
SFR
Address
R/W
Description
ERASE
0x94
W
This register is used to initiate either the Flash Mass Erase cycle or the
Flash Page Erase cycle. Specific patterns are expected for ERASE in
order to initiate the appropriate Erase cycle (default = 0x00).
0x55 – Initiate Flash Page Erase cycle. Must be proceeded by a write
to PGADDR @ SFR 0xB7.
0xAA – Initiate Flash Mass Erase cycle. Must be proceeded by a write
to FLSH_MEEN @ SFR 0xB2 and the debug port must be
enabled.
Any other pattern written to ERASE will have no effect.
PGADDR
0xB7
R/W
Flash Page Erase Address register containing the flash memory page
address (page 0 through 127) that will be erased during the Page Erase
cycle (default = 0x00). Note: the page address is shifted left by one bit
(see detailed description above).
Must be re-written for each new Page Erase cycle.
FLSHCTL
0xB2
R/W
Bit 0 (FLSH_PWE): Program Write Enable:
0 – MOVX commands refer to XRAM Space, normal operation (default).
1 – MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR.
This bit is automatically reset after each byte written to flash. Writes to
this bit are inhibited when interrupts are enabled.
W
Bit 1 (FLSH_MEEN): Mass Erase Enable:
0 – Mass Erase disabled (default).
1 – Mass Erase enabled.
Must be re-written for each new Mass Erase cycle.
R/W
Bit 6 (SECURE):
Enables security provisions that prevent external reading of flash
memory and CE program RAM. This bit is reset on chip reset and may
only be set. Attempts to write zero are ignored.
Internal Data Memory: The Internal data memory provides 256 bytes (0x00 to 0xFF) of data memory.
The internal data memory address is always one byte wide and can be accessed by either direct or
indirect addressing. The Special Function Registers occupy the upper 128 bytes. This SFR area is
available only by direct addressing. Indirect addressing accesses the upper 128 bytes of Internal
RAM.
The lower 128 bytes contain working registers and bit-addressable memory. The lower 32 bytes form
four banks of eight registers (R0-R7). Two bits on the program memory status word (PSW) select which
bank is in use. The next 16 bytes form a block of bit-addressable memory space at bit addresses 0x00-
0x7F. All of the bytes in the lower 128 bytes are accessible through direct or indirect addressing. Table 4
shows the internal data memory map.
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| 73S1210F-EB-LiteMS | 功能描述:開發(fā)板和工具包 - 8051 73S1210F Eval Brd Lite + Multi Sam RoHS:否 制造商:Silicon Labs 產(chǎn)品:Development Kits 工具用于評估:C8051F960, Si7005 核心: 接口類型:USB 工作電源電壓: |
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| 73S1215F-44IM/F | 功能描述:8位微控制器 -MCU 80515 SoC w/USB & PINpad RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| 73S1215F-44IM/F/P | 功能描述:IC SMART CARD READER PROG 44-QFN RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:73S12xx 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:260 系列:73S12xx 核心處理器:80515 芯體尺寸:8-位 速度:24MHz 連通性:I²C，智能卡，UART/USART，USB 外圍設(shè)備:LED，POR，WDT 輸入/輸出數(shù):9 程序存儲器容量:64KB（64K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:68-VFQFN 裸露焊盤 包裝:管件 |
| 73S1215F-44IMR/F | 功能描述:8位微控制器 -MCU 80515 SoC w/USB & PINpad RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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