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| 型號： | 72413 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | 雙N溝道的2.5 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 72413 |
SPICE Device Model Si9926BDY
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72413
01-Jun-04
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
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