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參數(shù)資料
| 型號(hào)： | 71108 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 71108 |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
Si3454ADV
Vishay Siliconix
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.060 @ V
GS
= 10 V
0.085 @ V
GS
= 4.5 V
4.5
3.8
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information:
Si3454ADV-T1
Si3454ADV-T1—E3 (Lead Free)
Marking Code:
A4xxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.5
3.4
T
A
= 70 C
3.6
2.7
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7
1.0
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.14
W
T
A
= 70 C
1.3
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
50
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
36
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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