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參數(shù)資料
| 型號： | 6P25-P |
| 廠商： | CD TECHNOLOGIES INC |
| 元件分類： | 電源模塊 |
| 英文描述： | 1-OUTPUT DC-DC BOOSTER MODULE |
| 封裝： | SIP-9 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 679K |
| 代理商： | 6P25-P |
6-PAK
8/2001
REV F
Page 2
Parameter
Conditions
Min
Typ
Max
Units
Input
Input Voltage
Vin
4.5
5.0
5.5
VDC
Input Current Ripple
Vin = 4.5V to 5.5V, Io = 6A
400
mARMS
Required Capacitance
Cin
Note 1
0
100
μF
Output
Output Voltage
Vo
Nominal
3.25
3.3
3.35
VDC
Output Program Range
Note 2
2.5
3.6
VDC
Output Current
Io
T
A= 60°C
0
6
Amps
Output Ripple
20Mhz BW
50
75
mVp-p
Output Rise Time
Tr
Vin = 5V, Io = 6A Resistive,
Co = 0
430
500
μS
Output Start-Up Time
Tr
Vin = 5v, Io = 6A Resistive,
CO = 5000
μF
3.0
4.0
mS
Output Capacitance Range Co
0
5000
μF
Line Regulation
Io = 6A
+0.2
+0.5
%
Load Regulation
Io min - Io max, Vin = 4.5-5.5V
+0.8
+1.2
%
Temperature Coefficient TA = -40°C to +60°C
Vin = 5V, IO = 6A
+0.01
%/°C
Combined Variation
Vin min-max &/or Io min-max
TA= -40°C to +60°C
+2
%
Protection
Note 3
General
Switching Frequency
800
kHz
Dynamic Response
ΔIO/Δt = 1A/10μsec, Vi = 5.0V, TA = 25°C
Load Change from I O = 0% to IO = 100%
Peak Deviation
20
30
mV
Settling time (VO<10% Peak Deviation)
130
200
μsec
Load change from I O = 100% to I O = 0%
Peak Deviation
20
35
mV
Settling time (VO<10% Peak Deviation)
200
300
μsec
Temperature
Operating Temperature
-40
+60
°C
Storage Temperature
-40
+125
°C
Electrical Specifications
Unless otherwise specified, operating conditions are as follows: Vo = 3.3V, TA = 25°C, Cin = 100
μF
Notes
1.
Input source<3” from 6-PAK, load transient <3A per SIP. 100
μF low ESR capacitor for load transients >3A per
SIP.
2.
Optional programming 2.5V - 3.6V. See Table.
3.
The unit is protected against short circuit on the output for durations not exceeding 10 seconds and a repetition rate of
less than 5%.
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