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參數(shù)資料
| 型號： | 6MBI75U2A-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT module |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-28 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 790K |
| 代理商： | 6MBI75U2A-060 |
H04-004-03a
MS5F 5743
13
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*)Biggest internal terminal resistance among arm.
4.1
5000
495
-
-
m
Lead resistance, terminal-chip *
R lead
-
-
I
IGES
Zero gate voltage
Collector current
ICES
ton
tr
tr (i)
toff
tf
VF
Collector-Emitter
saturation voltage
VGE=15V
Ic = 75A
VGE = 0V
VCE = 600V
Rg = 47
VGE(th)
520
3450
Turn-on time
Turn-off time
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
VGE=0V
VCE(sat)
(
terminal)
-
-
-
-
2.00
1.60
1.65
μs
IF = 75A
-
0.35
T =100°C
T = 25/50°C
465
3305
-
-
-
Tj=125°C
Tj= 25°C
Tj=125°C
Reverse recovery time
trr
VF
(chip)
IF = 75A
μs
Forward on voltage
(terminal)
Tj= 25°C
-
1.95
2.30
V
1.20
0.45
1.20
0.60
-
-
-
-
-
-
0.42
0.24
0.05
0.42
0.03
Vcc = 300V
Ic = 75A
VGE=±15V
600
±20
Ic
Icp
-Ic
75
150
75
150
255
AC : 1min.
V
V
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
Continuous
1ms
2500
VAC
N m
-Ic pulse
Pc
Tj
Tstg
A
°C
W
1 device
150
Collector current
Junction temperature
Storage temperature
Isolation
voltage
Collector Power Dissipation
Units
max.
typ.
Screw
Torque
-
min.
Characteristics
Mounting *3
3.5
Conditions
between terminal and copper base *1
between thermistor and others *2
Viso
-40 ~ +125
Ic = 75mA
200
VCE = 20V
Items
Symbols
VGE=±20V
VCE = 0V
-
-
-
nA
1.0
mA
V
-
-
-
-
7.7
V
6.2
6.7
Units
-
-
1.85
2.15
5.4
Maximum
Ratings
-
-
2.20
2.50
2.50
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz
-
nF
K
T
Resistance
R
T = 25°C
B
3375
B value
VCE(sat)
(chip)
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
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