參數(shù)資料
型號(hào): 6MBI50UA-120
廠商: Electronic Theatre Controls, Inc.
英文描述: 1200V / 50A 6 in one-package
中文描述: 1200伏/ 50A條6在一個(gè)封裝
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 119K
代理商: 6MBI50UA-120
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
6MBI50UA-120
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1MHz, Tj= 25°C
Vcc=600V, Ic=50A, Tj= 25°C
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic= 25A
0.1
1.0
10.0
100.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
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