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參數(shù)資料
| 型號： | 6HN04MH |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關設備 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 6HN04MH |
6HN04MH
No. A0365-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
VSD
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
VDS=30V, VGS=10V, ID=200mA
IS=200mA, VGS=0V
1.88
0.4
0.37
0.85
nC
nC
nC
V
1.2
Package Dimensions
unit : mm (typ)
7019A-003
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
0
2
1
2.0
0.65
0.3
0
0.15
1
2
3
0 to 0.02
PW=10
μ
s
D.C.
≤
1%
P.G
50
G
S
D
ID=200mA
RL=150
VDD=30V
VOUT
6HN04MH
VIN
10V
0V
VIN
Rg
Rg=1.2k
ID -- VDS
5
4
ID -- VGS
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
D
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
S
O
Gate-to-Source Voltage, VGS -- V
S
O
Ambient Temperature, Ta --
°
C
D
50
300
100
150
200
250
0
0
60
20
140
100
180
80
40
160
120
200
0
1.0
0.8
0.6
0.1
0.2
0.4
0.9
0.7
0.3
0.5
IT11263
0
1.0
0.5
2.0
3.0
1.5
2.5
3.5
4.0
IT11264
IT11266
0
2
4
6
8
20
10
12
16
14
18
IT11265
5.5
0
1.0
0.5
1.5
2.5
3.5
2.0
3.0
4.0
4.5
5.0
T=5
°
C
2
°
C
-5
°
C
Ta=25
°
C
VGS=3V
VDS=10V
1V
--60
0
3.5
4.5
1.5
4.0
5.0
2.0
2.5
0.5
3.0
1.0
5.5
--40
--20
0
20
40
60
80
100
120
140
160
ID=50mA, VGS=4V
I
D
=100mA, V
GS
=10V
8
ID=50mA
100mA
6
1V
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 6HN04MHTL-E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 6HN04S | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 6HN04SS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 6HN04SS-TL-H | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape |
| 6HOSECLAMP | 制造商:n/a 功能描述:Ships in 2 days |
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