參數(shù)資料
型號(hào): 6GBU02
元件分類: 橋式整流
英文描述: 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
文件頁數(shù): 2/5頁
文件大?。?/td> 103K
代理商: 6GBU02
6GBU Series
2
Bulletin I2718 rev. E 05/01
www.irf.com
I
O
Maximum DC output current
6.0
A
T
C = 100°C, Resistive & inductive load
4.8
TC=100°C,Capacitiveload
I
FSM
Maximum peak, one-cycle
175
t = 10ms
non-repetitive surge current,
following any rated load condition
182
t = 8.3ms
T
J = 150°C
and with rated VRRM reapplied
I2t
Maximum I2t for fusing,
154
A2s
t = 10ms
initial T
J = TJ max
138
t = 8.3ms
V
FM
Maximum peak forward voltage
1.0
V
T
J = 25
o
C, I
FM = 6A
per diode
IRM
Typical peak reverse leakage
5.0
A
T
J = 25
o
C, 100% VRRM
curren t per diode
400
TJ =150oC, 100% VRRM
VRRM
Maximum repetitive peak
50 to 800
V
reversevoltagerange
Forward Conduction
Voltage
V
RRM , max repetitive
V
RMS , max RMS
I
RRM max.
I
RRM max.
Type number
Code
peak rev. voltage
voltage
@ rated V
RRM
@ rated V
RRM
T
J = TJ max.
T
J = TJ max.
T
J = 25°C
T
J = 150°C
V
A
6GBU
005
50
35
5
400
01
100
70
5
400
02
200
140
5
400
04
400
280
5
400
06
600
420
5
400
08
800
560
5
400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
6GBU
Unit
Conditions
Thermal and Mechanical Specifications
Note (1): Bridge mounted on Aluminum heat sink of dim 65 x 35 x 1.5mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
T
J
Operatingandstorage
-55 to 150
o
C
Tstg
temperature range
R
thJC
Max. thermal resistance
2.2
°C/ W
DC rated current through bridge (1)
junction to case
R
thJA
Thermal resistance,
7.4
°C/ W
DC rated current through bridge (1)
junction to ambient
W
Approximateweight
4 (0.14)
g(oz)
T
MountingTorque
1.0
Nm
Bridge to Heatsink
9.0
Lb.in
Parameters
6GBU
Unit
Conditions
相關(guān)PDF資料
PDF描述
6GBU04 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU08 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU06 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU04 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU01 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
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