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參數(shù)資料
| 型號： | 6F20S02 |
| 元件分類： | 整流器 |
| 英文描述： | 6 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | DO-4, 1 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 2963K |
| 代理商： | 6F20S02 |
1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series
2222222222222
12
2
Voltage
V
RRM max. repetitive
V
RSM , maximum non-
I
RRM max.
I
RRM max.
I
RRM max.
Type number
Code
peak and off-state voltage
repetitive peak voltage T
J = 25°C
T
J = 100°C TJ = 150°C
V
A
mA
1N3879.
50
75
1N3880.
100
150
1N3881.
-
200
250
15 *
1.0 *
3.0 *
1N3882.
300
350
1N3883.
400
450
1N3889.
-
50
75
1N3890.
-
100
150
1N3891.
-
200
250
25 *
3.0 *
5.0 *
1N3892.
-
300
350
1N3893.
-
400
450
550
75
10
100
150
6FL..
20
200
275
12FL..
40
400
500
50
-
6.0
16FL..
60
600
725
80
800
950
100
1000
1250
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
180° conduction, half sine wave.
@ TC = 100°C
DC
I
F(RMS) Max. RMS current
9.5
19
25
A
I
FSM
Max. peak, one-cycle
85
130
170
215
t = 10ms No voltage
non-repetitive forward current
90
135
180
225
t = 8.3ms reapplied
72
110
145
180
t = 10ms 100% V
RRM
75 *
115
150 *
190
t = 8.3ms reapplied
Sinusoidal half wave
I2t
Maximum I2t for fusing
36
86
145
230
t = 10ms No voltage
Initial T
J = 150°C
33
78
130
210
t = 8.3ms reapplied
26
60
103
160
t = 10ms 100% V
RRM
23
55
94
150
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
363
856
1452
2290
A2√s t = 0.1 to 10ms, no voltage reapplied
V
FM
Max. forward voltage
1.4 *
1.4
1.4 *
1.4
T
J = 25°C, IF = rated IF(AV) (D.C.)
1.5 *
1.5
1.5 *
1.5
T
C = 100°C, IFM = π x rated IF(AV)
Forward Conduction
1N3879.
1N3889.
Parameter
1N3883.
6FL..
1N3893. 16FL.. Units Conditions
12FL..
6*
6
12 *
16
A
A2s
V
* JEDEC registered value
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相關代理商/技術參數(shù) |
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