參數(shù)資料
型號(hào): 6CWQ03FNTRL
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 整流器
英文描述: 3.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-252AA
封裝: MODIFIED TO TO-252AA, DPAK-3
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 109K
代理商: 6CWQ03FNTRL
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94247
2
Revision: 13-Aug-08
6CWQ03FNPbF
Vishay High Power Products
Schottky Rectifier, 2 x 3.5 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
3 A
TJ = 25 °C
0.45
V
6 A
0.52
3 A
TJ = 125 °C
0.35
6 A
0.46
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
2
mA
TJ = 125 °C
50
Threshold voltage
VF(TO)
TJ = TJ maximum
0.22
V
Forward slope resistance
rt
32.86
m
Ω
Typical junction capacitance per leg
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
290
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
5.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
per leg
RthJC
DC operation
See fig. 4
4.7
°C/W
per device
2.35
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style D-PAK (similar to TO-252AA)
6CWQ03FN
dP
tot
dT
J
-------------
1
R
thJA
--------------
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