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參數(shù)資料
| 型號(hào)： | 6AM12 |
| 英文描述： | Microprocessor Supervisory Circuits |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 27K |
| 代理商： | 6AM12 |
Application
High speed power switching
Features
Low on-resistance
N-channel: R
DS
(on)
≤
0.17
, V
GS
= 10 V
I
D
= 4 A
P-channel: R
DS
(on)
≤
0.2
, V
GS
= –10 V
I
D
= –4 A
Capable of 4 V gate drive
Low drive current
Hight speed switching
High density mounting
Suitable for H-bridged motor driver
Discrete packaged devices of same die
N-channel: 2SK970 (TO-220AB),
2SK1093 (TO-220FM)
P-channel: 2SJ172 (TO-220AB),
2SJ175 (TO-220FM)
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Ratings
–––––––––––––––––––––
Nch
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch (Tc =25°C)**
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
6 devices operation
Symbol
Pch
Unit
60
–60
V
±20
±20
V
7
–7
A
28
–28
A
7
–7
A
42
W
4.8
W
150
°C
–55 to +150
°C
SP-12TA
1 : Nch Source
2, 8, 9 : Nch Gate
3, 7,10 : Nch Drain
: Pch Drain
4, 6,11 : Pch Gate
5, 12 : Pch Source
4
2
6
3
7
10
11
9
8
12
5
Pch
Nch
1
12
1
6AM12
Silicon N Channel/P Channel Complementary Power MOS FET Array
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|---|---|
| 6AM13 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
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