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參數(shù)資料
| 型號(hào)： | 62WV12816EI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | SRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的128K的× 16位 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 276K |
| 代理商： | 62WV12816EI |
Revision 1.1
Jan.
2004
3
R0201-
STC62WV12816
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
--
0.1
1.0
uA
t
CDR
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
--
--
ns
t
R
See Retention Waveform
T
RC
(2)
--
--
ns
SYMBOL
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
C
IN
V
IN
=0V
6
pF
C
DQ
V
I/O
=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
0
O
C to +70
O
C
Vcc
Commercial
2.4V ~ 5.5V
Industrial
-40
O
C to +85
O
C
2.4V ~ 5.5V
1
. Typical characteristics are at T
A
= 25
o
C.
2
. Fmax = 1/t
.
3
. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4
.I
ccs
B1_Max.
is 3uA/10uA at Vcc=3V/5V and T
A
=70
o
C.
5
. Icc
_Max.
is 30mA(@3V)/62mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS
( TA = -40 to + 85
o
C )
1
. Vcc = 1.5V, T
A
= + 25
O
C
2
. t
RC
= Read Cycle Time
3
. Icc
DR_MAX.
is 0.7uA at T
A
=70
o
C.
ABSOLUTE MAXIMUM RATINGS
(1)
ST
C
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
PARAMETER
NAME
1. This parameter is guaranteed and not 100% tested.
SYMBOL
PARAMETER
Terminal Voltage with
Respect to GND
RATING
-0.5 to
Vcc+0.5
UNITS
V
TERM
V
T
BIAS
Temperature Under Bias
-40 to +85
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
STC62WV12816
(3)
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc =3.0V
V
IL
Guaranteed Input Low
Voltage
Vcc =5.0V
-0.5
--
0.8
V
Vcc =3.0V
2.0
V
IH
Guaranteed Input High
Voltage
Vcc =5.0V
2.2
--
V
cc
+0.3
V
I
IL
Input Leakage Current
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
LO
Output Leakage Current
Vcc = Max,CE = V
IH
or OE = V
IH
,
V
I/O
= 0V to Vcc
--
--
1
uA
Vcc =3.0V
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 2.0mA
Vcc =5.0V
--
--
0.4
V
Vcc =3.0V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1.0mA
Vcc =5.0V
2.4
--
--
V
Vcc =3V
70ns
25
I
CC
(5)
Operating Power Supply
Current
CE = V
IL
,
I
DQ
= 0mA, F = Fmax
(2)
Vcc =5V
70ns
--
--
55
mA
Vcc =3.0V
0.5
I
CCSB
Standby Current-TTL
CE=V
IH
I
DQ
= 0mA
Vcc =5.0V
--
--
1.0
mA
Vcc =3.0V
0.3
5
I
CCSB1
(4)
Standby Current-CMOS
CE
≧
V
cc
-0.2
V
,
V
IN
≧
V
cc
-0.2
V
or
V
IN
≦
0.2
V
Vcc =5.0V
--
1.0
30
uA
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