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參數(shù)資料
| 型號(hào)： | 5STP51L2200 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5150 A, 1600 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 388K |
| 代理商： | 5STP51L2200 |
ABB Semiconductors AG reserves the right to change specifications without notice.
VRSM =
2800 V
IFAVM =
5150 A
IFRMS =
8080 A
IFSM
=65 kA
VF0
=0.77 V
rF
=
0.082 m
Doc. No. 5SYA1103-01 Sep. 01
Patented free-floating silicon technology
Very low on-state losses
High average and surge current.
Blocking
Part Number
5SDD 51L2800
5SDD 51L2600
5STP 51L2200
Conditions
VRRM
2000 V
1850 V
1600 V
f = 50 Hz,
tp = 10ms
VRSM
2800 V
2600 V
2200 V
tp = 10ms
VRSM
3000 V
2800 V
2400 V
tp
≤ 5ms
Tj = 0-175°C
IRRM
≤ 400 mA
VRRM
Tj = 175°C
Tvj = -40°C reduces VRSM and VRRM by 5%.
Mechanical data
nom.
70 kN
min.
63 kN
Fm
Mounting force
max.
77 kN
a
Acceleration
Device unclamped
Device clamped
100
m/s
2
m/s
2
Dp
Pole-piece diameter
78 mm
H
Housing thickness
27 mm
m
Weight IGCT
1.45 kg
Ds
Surface creepage distance
≥
35 mm
Da
Air strike distance
≥
14 mm
Rectifier Diode
5SDD 51L2800
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