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參數(shù)資料
| 型號(hào)： | 5SLX12L2507 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 108 A, 2500 V, SILICON, RECTIFIER DIODE |
| 封裝： | 12.40 X 12.40 MM, DIE-1 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 57K |
| 代理商： | 5SLX12L2507 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
2500 V
IF
=
108 A
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA1667-00 Dec 06
Fast and soft reverse-recovery
Low losses
High SOA
Passivation: SIPOS Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
2500
V
Continuous forward current
IF
108
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
216
A
Junction temperature
Tvj
-40
125
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
1.95
V
Continuous forward voltage
VF
IF = 108 A
Tvj = 125 °C
1.95
V
Tvj = 25 °C
2
A
Continuous reverse current
IR
VR = 2500 V
Tvj = 125 °C
1.5
7
mA
Tvj = 25 °C
85
A
Peak reverse recovery current
Irr
Tvj = 125 °C
110
A
Tvj = 25 °C
43
C
Recovered charge
Qrr
Tvj = 125 °C
80
C
Tvj = 25 °C
600
ns
Reverse recovery time
trr
Tvj = 125 °C
1020
ns
Tvj = 25 °C
37
mJ
Reverse recovery energy
Erec
IF = 108 A,
VR = 1250 V,
di/dt = 420 A/s,
Lσ = 1200 nH,
Inductive load,
Switch:
2x 5SMX12L2511
Tvj = 125 °C
70
mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12L2507
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