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參數(shù)資料
| 型號： | 5SDD14F6000 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1363 A, 6000 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 5SDD14F6000 |
5SDD 14F6000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/051/01 Jul-10
2 of 5
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 14F6000
5SDD 14F5800
6 000
5 800
V
IFAVm
Average forward current
Tc = 85 °C
1 363
A
IFRMS
RMS forward current
2 142
A
IRRM
Repetitive reverse current,
VR = VRRM
75
mA
tp = 8.3 ms
20 300
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
19 000
A
tp = 8.3 ms
18 700
A
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
17 500
A
tp = 8.3 ms
1 710 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse, Tj = 25 °C
tp = 10 ms
1 805 000
A
2s
tp = 8.3 ms
1 450 000
A
2s
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
1 531 250
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 150
°C
TSTG
Storage temperature range
-40 ÷ 150
°C
Unless otherwise specified Tj = 150 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
IF1 = 2 142 A, IF2 = 6 425 A
1.015
V
rT
Forward slope resistance
0.407
m
VFM
Maximum forward voltage
IFM = 4 000 A
2.68
V
Qrr
Recovered charge
VR = 100 V, IFM = 1 000 A, diF/dt = -10 A/
s
3 000 4 000
C
Unless otherwise specified Tj = 150 °C
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